Short-laser-pulse and steady-light induced degradation of intrinsic, p-type and compensated a-Si:H
| Autor: | P. Tzanetakis, H. Fritzsche, N. Kopidakis, M. Androulidaki, C. Kalpouzos, P. Stradins |
|---|---|
| Rok vydání: | 1996 |
| Předmět: |
Amorphous silicon
Materials science Silicon Band gap business.industry Photoconductivity Doping Kinetics chemistry.chemical_element Condensed Matter Physics Laser Electronic Optical and Magnetic Materials law.invention chemistry.chemical_compound chemistry law Metastability Materials Chemistry Ceramics and Composites Optoelectronics business |
| Zdroj: | Journal of Non-Crystalline Solids. :458-461 |
| ISSN: | 0022-3093 |
| Popis: | Degradation of the same hydrogenated amorphous silicon (a:Si:H) samples with short laser pulses (30 ns) and steady bandgap light (CW) reveals that the kinetics is different for pulses and CW. For pulse degradation the kinetics depends on doping. Particularly in doped samples pulses degrade the photoconductivity, σp, much more than CW light for the same increase in light-induced defects, ND. The lack of correlation between σp and ND suggests that other metastable structural changes besides defects are induced by bandgap light. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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