Design and characterization of 1.3-μm AlGaInAs-InP multiple-quantum-well lasers
Autor: | Tso-Min Chou, Jieh-Ping Sih, Gary A. Evans, Jerome K. Butler, A. Mantle, Jay B. Kirk, S.R. Selmic, David P. Bour |
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Rok vydání: | 2001 |
Předmět: |
Threshold current
Materials science business.industry Multiple quantum Slope efficiency Laser Atomic and Molecular Physics and Optics Gallium arsenide law.invention chemistry.chemical_compound Optics Effective mass (solid-state physics) chemistry law Perpendicular Optoelectronics Electrical and Electronic Engineering business Beam divergence |
Zdroj: | IEEE Journal of Selected Topics in Quantum Electronics. 7:340-349 |
ISSN: | 1077-260X |
DOI: | 10.1109/2944.954148 |
Popis: | A comprehensive design method for long wavelength strained quantum-well lasers is applied to design uncooled multiple-quantum-well AlGaInAs-InP 1.3-/spl mu/m lasers for communication systems. The method includes multiband effective mass theory and electromagnetic waveguide theory. The resulting AlGaInAs-InP laser has a threshold current of 12.5 mA at 25/spl deg/C, with a slope efficiency of 0.43 W/A, at 77 K or greater characteristic temperature, a 38/spl deg/ perpendicular far-field beam divergence, and will operate at temperatures in excess of 100/spl deg/C. |
Databáze: | OpenAIRE |
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