Outdiffusion of Be during rapid thermal annealing of high‐dose Be‐implanted GaAs

Autor:	H. Baratte, P. E. Hallali, Maurice Heathcote Norcott, J. P. de Souza, R. G. Schad, F. Cardone, D. K. Sadana
Rok vydání:	1990
Předmět:	chemistry.chemical_classification Secondary ion mass spectrometry Auger electron spectroscopy Ion implantation chemistry Annealing (metallurgy) Analytical chemistry General Physics and Astronomy chemistry.chemical_element Surface layer Beryllium Inorganic compound Auger
Zdroj:	Journal of Applied Physics. 67:6589-6591
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.345093
Popis:	The outdiffusion of Be implanted into GaAs has been found to be identical after capless or capped (Si3N4 or SiO2 ) rapid thermal annealing (RTA) at 900–1000 °C and to depend on the Be dose and its proximity to the surface. The outdiffusion is more pronounced when the Be implant is shallow ( 1×1015 cm−2 ). It is demonstrated that the Be outdiffusion is driven by the presence of a highly damaged surface layer. Auger results suggest the formation of a BeOx compound at the surface of a high‐dose (1×1016 cm−2 ) Be‐implanted sample that underwent capless RTA at 1000 °C/1 s. It appears that BeOx formation occurs when the outdiffused Be interacts with the native Ga/As oxides during annealing. All the Be remaining in the GaAs after a >900 °C/2 s RTA is electrically active.
Databáze:	OpenAIRE
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