The Energy Levels of Zn and Se in (AlxGa1-x)0.52In0.48P

Autor:	Naozo Watanabe, Masumi Honda, Yoshifumi Mori, Kunio Kaneko, Masao Ikeda
Rok vydání:	1985
Předmět:	Hall effect Chemistry Impurity General Engineering Analytical chemistry General Physics and Astronomy Activation energy Atomic physics Mole fraction Acceptor Energy (signal processing)
Zdroj:	Japanese Journal of Applied Physics. 24:L187
ISSN:	1347-4065 0021-4922
Popis:	The energy levels of Zn and Se impurities in (Al x Ga1-x )0.52In0.48P were investigated by temperature dependent Hall measurement. The activation energy of Zn acceptor increases monotonically with increasing AlInP mole fraction x, from 25 meV at x=0 to 97 meV at x=0.75. The activation energy of Se donor begins to increase at x=0.2–0.3, and it reaches a maximum value of about 95 meV around x=0.4. As x increases from 0.5 to 1, the energy level tends to decrease to 72 meV. This compositional dependence of the energy levels in p-type and n-type materials is similar to those in AlGaAs.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::476c9c48c5b8a4c8b65f9b75ee8fd8f8 https://doi.org/10.1143/jjap.24.l187 Zobrazit plný text záznamu