A novel low-power static GaAs MESFET logic gate
| Autor: | M.R. Namordi, W.A. White |
|---|---|
| Rok vydání: | 1982 |
| Předmět: |
Delay calculation
Engineering Pass transistor logic business.industry Electrical engineering NAND gate Hardware_PERFORMANCEANDRELIABILITY Ring oscillator Electronic Optical and Magnetic Materials Logic gate Hardware_INTEGRATEDCIRCUITS MESFET Electrical and Electronic Engineering business NMOS logic Gate equivalent Hardware_LOGICDESIGN |
| Zdroj: | IEEE Electron Device Letters. 3:264-267 |
| ISSN: | 0741-3106 |
| DOI: | 10.1109/edl.1982.25562 |
| Popis: | A novel GaAs MESFET logic gate is described. The gate uses depletion mode FET's and is a static one. It is about 30% faster and consumes about 30% of the power of the BFL gate. Ring oscillator circuits have been fabricated using one embodiment of the gate. For unity fan-out, an average propagation delay of 58.7 ps with a power dissipation of 18.8 mW has been achieved. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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