Characterization of Near Conduction Band SiC/SiO2 Interface Traps in Commercial 4H-SiC Power MOSFETs

Autor: Hema Lata Rao Maddi, Suvendu Nayak, Vishank Talesara, Yibo Xu, Wu Lu, Anant K. Agarwal
Rok vydání: 2022
Zdroj: 2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA).
DOI: 10.1109/wipda56483.2022.9955292
Databáze: OpenAIRE