Characterization of Near Conduction Band SiC/SiO2 Interface Traps in Commercial 4H-SiC Power MOSFETs
Autor: | Hema Lata Rao Maddi, Suvendu Nayak, Vishank Talesara, Yibo Xu, Wu Lu, Anant K. Agarwal |
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Rok vydání: | 2022 |
Zdroj: | 2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA). |
DOI: | 10.1109/wipda56483.2022.9955292 |
Databáze: | OpenAIRE |
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