| Autor: |
Lisa Stecker, Leye Aina, Eric A. Martin, Mike Mattingly, Tom Loughran, Ayub Fathimulla |
| Rok vydání: |
1988 |
| Předmět: |
|
| Zdroj: |
Journal of Crystal Growth. 93:911-918 |
| ISSN: |
0022-0248 |
| Popis: |
High-quality AlInAs exhibiting excellent photoluminescence and having residual electron concentrations as low as 7×10 15 cm −3 with electron mobilities as high as 1900 cm 2 /V·s has been grown by OMVPE. AlInAs/InP heterostructures are shown to be type II heterojunctions with electron mobilities as high as 4500 cm 2 /V·s at 300 K. This material was used for the fabrication of high-gain heterostructure MESFETs and heterostructure insulated-gate FETs (HIGFETs). AlInAs/InP MESFETs have DC transconductances as high as 220 mS/mm and microwave gains as high as 11.5 dB at 10 GHz with an max of 42 GHz. AlInAs/InP/GaInAs HIGFETs, however, show high transconductances up to 470 mS/mm at 300 K and 530 mS/mm at 77 K. These are some of the highest performance FETs fabricated on OMVPE-grown material. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
|
