Silicon (001) Heteroepitaxy on 3C-SiC(001)/Si(001) Seed
| Autor: | Marina Gutierrez, Sean R.C. McMitchell, Gabriel Ferro, Veronique Soulière, Daniel Araujo, Taguhi Yeghoyan, Kassem Alassaad |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science Silicon business.industry Mechanical Engineering chemistry.chemical_element 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences chemistry Mechanics of Materials 0103 physical sciences Optoelectronics Surface modification General Materials Science 0210 nano-technology business |
| Zdroj: | Materials Science Forum. 924:128-131 |
| ISSN: | 1662-9752 |
| Popis: | We report for the first time the successful heteroepitaxial growth of Si(100) oriented layer on top of a 3C-SiC(001) seed. By using a post-growth modification of the 3C-SiC surface (pulse insertion of precursors during cooling), it led to a change in Si nucleation, favoring squared (100) islands instead of elongated (110) ones. Without this surface modification step, the Si layers grown on 3C-SiC were always polycrystalline with a mixture of (110) and (100) orientations. Using such Si(100) layer grown on top of 3C-SiC(100), a (100) oriented 3C-SiC single crystalline layer was successfully grown on top, fabricating thus for the first time a fully (100) oriented multilayer heterostructure made of Si(substrate)/SiC/Si/SiC. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|