Stress, hydration, and optical absorption in ion-implanted aluminum oxide
Autor: | G.W. Arnold |
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Rok vydání: | 1998 |
Předmět: | |
Zdroj: | Materials Science and Engineering: A. 253:71-77 |
ISSN: | 0921-5093 |
DOI: | 10.1016/s0921-5093(98)00711-4 |
Popis: | The surface stress induced by energetic implants (Ar, Xe) promotes ambient hydration (max.∼1 at.%) into Al 2 O 3 for collisional deposition energies of 10 21 –10 22 keV cm −3 . Al implants are anomalous in that they induce hydration above 10 21 keV cm −3 that rises near-linearly with no saturation at the highest deposition levels (∼10 24 keV cm −3 ). Both Al and H produce anomalously large F-centre concentrations; stress measurements show near-coincidence behaviour reflecting their influence on O-vacancy production. |
Databáze: | OpenAIRE |
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