Stress, hydration, and optical absorption in ion-implanted aluminum oxide

Autor: G.W. Arnold
Rok vydání: 1998
Předmět:
Zdroj: Materials Science and Engineering: A. 253:71-77
ISSN: 0921-5093
DOI: 10.1016/s0921-5093(98)00711-4
Popis: The surface stress induced by energetic implants (Ar, Xe) promotes ambient hydration (max.∼1 at.%) into Al 2 O 3 for collisional deposition energies of 10 21 –10 22 keV cm −3 . Al implants are anomalous in that they induce hydration above 10 21 keV cm −3 that rises near-linearly with no saturation at the highest deposition levels (∼10 24 keV cm −3 ). Both Al and H produce anomalously large F-centre concentrations; stress measurements show near-coincidence behaviour reflecting their influence on O-vacancy production.
Databáze: OpenAIRE