Observation of the anisotropic hopping conductivity of p-CdSb in a magnetic field

Autor:	M A Shakhov, A V Lashkul, K G Lisunov, M. Safonchik, R. Laiho, E. Lähderanta
Rok vydání:	2004
Předmět:	Effective mass (solid-state physics) Condensed matter physics Electrical resistivity and conductivity Chemistry General Materials Science Metal–insulator transition Conductivity Condensed Matter Physics Critical value Anisotropy Acceptor Magnetic field
Zdroj:	Journal of Physics: Condensed Matter. 16:333-342
ISSN:	1361-648X 0953-8984
DOI:	10.1088/0953-8984/16/3/013
Popis:	The resistivity of the anisotropic semiconductor p-CdSb is investigated in a wide temperature range of T = 1.9–300 K in pulsed magnetic fields up to B = 25 T. Two not intentionally doped single-crystalline samples oriented along the crystallographic axes [100] (no. 1) and [010] (no. 2) are used for measurements of the resistivity, ρ, in transversal magnetic field configuration. Below the resistivity follows the laws for B Bc, where the coefficients C and S do not depend on T, and . These are characteristics of nearest-neighbour hopping conductivity. The coefficients C and S depend on the direction of B, and their ratios agree completely with the values calculated with the components of the hole effective mass. The acceptor concentrations, and for no. 1 and no. 2, respectively, are relatively close to the critical value of the metal–insulator transition (MIT), . This leads to enhancement of the mean localization radii, in no. 1 and in no. 2, with respect to the value of far from the MIT determined by an asymptote of the wavefunction at a large distance from the impurity centre.
Databáze:	OpenAIRE
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