Simulation of graphene field-effect transistors and resonant tunneling diodes based on carbon nanomaterials

Autor:	I. I. Abramov, I. A. Romanova, N. V. Kolomejtseva, Irina Y. Shcherbakova, Vladimir Labunov
Rok vydání:	2019
Předmět:	Materials science business.industry Optoelectronics Graphene field effect transistors business Carbon nanomaterials Quantum tunnelling Diode
Zdroj:	International Conference on Micro- and Nano-Electronics 2018.
DOI:	10.1117/12.2520729
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::4753ab6019b04c702e414b0370706ab6 https://doi.org/10.1117/12.2520729 Zobrazit plný text záznamu