Spectroscopic diagnostics of defect and interface effects on carrier dynamics in semiconductor optoelectronics
| Autor: | Baolai Liang, Andrew Hudson, Adam C. Scofield, William T. Lotshaw, Nathan P. Wells, Diana L. Huffaker |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Photoluminescence Materials science business.industry Heterojunction 02 engineering and technology Semiconductor device Carrier lifetime Double heterostructure 021001 nanoscience & nanotechnology 01 natural sciences Semiconductor 0103 physical sciences Optoelectronics Relaxation (physics) Time-resolved spectroscopy 0210 nano-technology business |
| Zdroj: | SPIE Proceedings. |
| ISSN: | 0277-786X |
| DOI: | 10.1117/12.2224308 |
| Popis: | We use steady-state and time-resolved spectroscopy to evaluate optoelectronic material quality and obtain detailed information about carrier generation, transport, and relaxation in semiconductor devices and test structures. This report focuses on time-resolved and steady-state photoluminescence of III-V reference heterostructures at temperatures between 4K and 300K in order to investigate the mechanisms limiting carrier lifetime and to develop the capability to provide actionable feedback to research-and-development efforts for improvement and optimization of material properties and/or device performance. We combine the results of photoluminescence experiments with model-based analyses and simulations of carrier relaxation to assess the impacts of defects and interface quality on the relaxation dynamics of photo-generated carriers in double heterostructure test vehicles grown by MOCVD and MBE. |
| Databáze: | OpenAIRE |
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