Silicon-on-insulator control impact-ionization-avalanche transistor
| Autor: | V. Dobrovolsky, V. Rossokhaty, S. Pavljuk, Sorin Cristoloveanu |
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| Rok vydání: | 2006 |
| Předmět: | |
| Zdroj: | Applied Physics Letters. 88:073502 |
| ISSN: | 1077-3118 0003-6951 |
| Popis: | In thin silicon-on-insulator structures, the gate effectively controls the longitudinal component of the electric field intensity in the pn+ junction, and thus the impact avalanche ionization of carriers. The present work proposes a device based on this operation principle: the control-impact-ionization-avalanche transistor, which achieves a transconductance of 0.14(A∕V)∕mm. According to the developed theoretical model and preliminary experimental data, the device can be optimized to achieve very high transconductance and frequencies such as several (A/V)/mm at frequencies of the order of 100MHz and lower, and about 1(A∕V)∕mm in 0.1–1THz range. |
| Databáze: | OpenAIRE |
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