Synchrotron Radiation‐Assisted Si Epitaxial Growth Using Si2 H 6 and SiH2Cl2 Gases: Properties in the Low Temperature Region
| Autor: | Kozo Kuchitsu, Tetsuo Akutsu, Takahashi Junichi, Yuichi Utsumi, Tsuneo Urisu |
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| Rok vydání: | 1994 |
| Předmět: |
Materials science
Hydrogen Renewable Energy Sustainability and the Environment Analytical chemistry Synchrotron radiation chemistry.chemical_element Crystal growth Condensed Matter Physics Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry.chemical_compound Crystallography Crystallinity chemistry Desorption Excited state Materials Chemistry Electrochemistry Disilane Molecular beam epitaxy |
| Zdroj: | Journal of The Electrochemical Society. 141:1562-1565 |
| ISSN: | 1945-7111 0013-4651 |
| DOI: | 10.1149/1.2054962 |
| Popis: | Synchrotron radiation excited gas source molecular beam epitaxial growth was examined using reaction gases Si[sub 2]H[sub 6] and SiH[sub 2]Cl[sub 2]. In Si[sub 2]H[sub 6], good crystallinity was obtained only at high temperature regions, where the growth rate is limited by the supply rate to the substrate surface of gas molecules or by the desorption rate of the surface-terminating hydrogen. The growth rate significantly depends on the temperature at the region of the rate limited by the hydrogen desorption. In SiH[sub 2]Cl[sub 2], the growth rate was almost independent of the temperature and the crystallinity was good at all temperatures examined (400 to 550 C). Desorption of H and Cl in the form of HCl is considered. |
| Databáze: | OpenAIRE |
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