van der Waals Epitaxy of Earth-Abundant Zn3P2 on Graphene for Photovoltaics
| Autor: | Elias Z. Stutz, Qihua Xiong, Mahdi Zamani, Roland E. Logé, Simon Escobar Steinvall, Nicolas Humblot, Cyril Cayron, Anna Fontcuberta i Morral, Andrés Granados del Águila, Rajrupa Paul, Jean-Baptiste Leran, Shreyas S. Joglekar |
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| Rok vydání: | 2020 |
| Předmět: |
Materials science
010405 organic chemistry Graphene business.industry Earth abundant Nanotechnology General Chemistry 010402 general chemistry Condensed Matter Physics 01 natural sciences 0104 chemical sciences law.invention Zinc phosphide chemistry.chemical_compound chemistry law Photovoltaics Van der waals epitaxy General Materials Science Lower cost business |
| Zdroj: | Crystal Growth & Design. 20:3816-3825 |
| ISSN: | 1528-7505 1528-7483 |
| DOI: | 10.1021/acs.cgd.0c00125 |
| Popis: | Earth-abundant semiconducting materials are a potential solution for large-scale deployment of solar cells at a lower cost. Zinc phosphide (Zn3P2) is one such Earth-abundant material with optoelect... |
| Databáze: | OpenAIRE |
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