Direct Heterojunction of Polycrystalline InP/Si by Hydride Vapor Phase Epitaxy for Photovoltaic Application
| Autor: | Sun, Y.T., Metaferia, W., Lourdudoss, S. |
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| Jazyk: | angličtina |
| Rok vydání: | 2013 |
| Předmět: | |
| DOI: | 10.4229/28theupvsec2013-1av.3.32 |
| Popis: | 28th European Photovoltaic Solar Energy Conference and Exhibition; 437-440 The direct heterojunction of polycrystalline InP on (001) and (111) silicon substrates was realized by indium assisted heteroepitaxy in a hydride vapor phase epitaxy system. The poly-InP growth under various temperatures and dopant incorporation were investigated. A coherent InP/Si interface and poly-InP growth rate > 20 μm/hour was observed by cross-sectional scanning electron microscopy (SEM). Effective n-type sulfur doping was revealed by stain-etching. The material properties of poly-InP were characterized by powder X-ray Diffraction (XRD), Atomic Force Microscopy (AFM), photoluminescence (PL), and Raman spectroscopy. A preferential crystalline orientation of (111) plane with substrate orientation dependent grain size was observed. Raman spectroscopy characterization at different locations on poly-InP surface reveals residual tensile strain in InP on silicon. High optical quality of poly-InP is revealed by PL measurement. |
| Databáze: | OpenAIRE |
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