Effect of annealing atmosphere and electron beam pre-irradiation on the properties of SrGa2S4:Eu phosphor films
Autor: | E. A. Sosnov, Kazuhiko Hara, V.G. Korsakov, Yoichiro Nakanishi, A.A. Sidorova, Hidenori Mimura, S. V. Mjakin, Hiroko Kominami, V.V. Bakhmetjev, Maxim Sychov |
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Rok vydání: | 2013 |
Předmět: |
Photoluminescence
Materials science Annealing (metallurgy) Organic Chemistry Analytical chemistry chemistry.chemical_element Mineralogy Phosphor Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials law.invention Inorganic Chemistry Crystallinity chemistry law Electron beam processing Irradiation Electrical and Electronic Engineering Physical and Theoretical Chemistry Crystallization Europium Spectroscopy |
Zdroj: | Optical Materials. 35:1109-1111 |
ISSN: | 0925-3467 |
DOI: | 10.1016/j.optmat.2012.12.025 |
Popis: | Europium activated strontium thiogallate (SrGa2S4:Eu) phosphors were prepared by the deposition of SrS:Ga2S3:Eu films of about 1 μm thickness onto quartz glass substrates by two electron beam (EB) evaporation followed by irradiation with 900 keV accelerated electrons and subsequent annealing in either sulfur vapor or H2S(10%):Ar(90%) mixture at 900 °С. Annealing in vaporized sulfur provides a significantly higher crystallinity and PL intensity of the obtained phosphor films in comparison with annealing in H2S:Ar mixture. Preliminary irradiation is found to further increase the crystallinity and photoluminescence (PL) intensity of the subsequently annealed phosphors due to the formation of crystallization centers. |
Databáze: | OpenAIRE |
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