CONSTRUCTION OF ANISOTYPE CdS/Si HETEROJUNCTION AND LINEUP USING I–V AND C–V MEASUREMENTS

Autor:	Raid A. Ismail, Abdul-Majeed E. Al-Samarai, Omar A. Abdulrazaq
Rok vydání:	2006
Předmět:	Materials science Silicon business.industry chemistry.chemical_element Statistical and Nonlinear Physics Heterojunction Condensed Matter Physics Monocrystalline silicon chemistry Band diagram Valence band Chemical spray Optoelectronics business Conduction band Voltage
Zdroj:	Modern Physics Letters B. 20:1833-1838
ISSN:	1793-6640 0217-9849
DOI:	10.1142/s0217984906012158
Popis:	Near-ideal p-CdS/n-Si heterojunction (HJ) band edge lineup has been investigated for the first time with the aid of I–V and C–V measurements. The heterojunction was obtained by the deposition of CdS films prepared by chemical spray pyrolysis technique (CSP), on the monocrystalline n-type silicon. The experimental data of the conduction band offset, ΔEc and the valence band offset, ΔEc were compared with theoretical values. The band offsets ΔEc=530 meV and ΔEv=770 meV were obtained at 300 K. The energy band diagram of p-CdS/n-Si HJ was constructed. The C–V measurements depicted that the junction was an abrupt type and the built-in voltage was determined from the C-2–V plot.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::471b7b26b215dbdf1f036aeef6a444df https://doi.org/10.1142/s0217984906012158 Zobrazit plný text záznamu