Intrinsic p-type ZnO films fabricated by atmospheric pressure metal organic chemical vapor deposition
| Autor: | Shan-Ming Lan, Sen-Mao Liao, Jian-Wen Chen, Tsun-Neng Yang, Wu-Yih Uen, Li-Wei Weng, Yen-Chin Huang, Zhen-Yu Li, Tai-Yuan Lin, Yu-Hsiang Huang |
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| Rok vydání: | 2010 |
| Předmět: |
Materials science
Photoluminescence Atmospheric pressure Silicon Analytical chemistry chemistry.chemical_element Surfaces and Interfaces Chemical vapor deposition Condensed Matter Physics Acceptor Surfaces Coatings and Films chemistry Electrical resistivity and conductivity Vacancy defect Metalorganic vapour phase epitaxy |
| Zdroj: | Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 28:1307-1311 |
| ISSN: | 1520-8559 0734-2101 |
| DOI: | 10.1116/1.3484138 |
| Popis: | The structural, electrical, and optical properties of ZnO films fabricated by atmospheric pressure metal organic chemical vapor deposition (AP-MOCVD) under various gas flow ratios of [H2O]/[DEZn] (VI/II ratio) ranging from 0.55 to 2.74 were systematically examined. Hall effect measurements exhibited an evident effect of the VI/II ratio on the conduction type of the intrinsic films. An n-type film was fabricated at the VI/II ratio=0.55; however, p-type ZnO films with the hole concentration of the order of 1017 cm−3 could be achieved at VI/II ratios higher than 1.0. In particular, the highest mobility of 91.6 cm2/V s and the lowest resistivity of 0.369 Ω cm have been achieved for the specimen fabricated at the VI/II ratio=1.10. Moreover, room-temperature photoluminescence (PL) measurements demonstrated an interstitial Zn (Zni) donor defect related emission at 2.9 eV for the n-type film, while a Zn vacancy (VZn) acceptor defect related one at 3.09 eV for the p-type films. The existence of material intrinsic ... |
| Databáze: | OpenAIRE |
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