Reliability characteristics of an HfO2/SiO2 stack gate dielectric annealed in a deuterium ambient

Autor:	Hokyung Park, Hyunjun Sim, Hyundoek Yang, Hyunsang Hwang
Rok vydání:	2003
Předmět:	Reliability (semiconductor) Materials science Deuterium Stack (abstract data type) business.industry Gate dielectric Optoelectronics business
Zdroj:	Extended Abstracts of the 2003 International Conference on Solid State Devices and Materials.
DOI:	10.7567/ssdm.2003.c-2-4
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::470bf9d38147f42de1dbd49a843e8eee https://doi.org/10.7567/ssdm.2003.c-2-4 Zobrazit plný text záznamu