The Defects of Silicon Reacted with Carbon Content Vapour in ULSI Nano-meter-Generation Technology

Autor:	Cheng-Chia Kuo, Po-Ying Chen, M.H. Jing, Shen-Li Chen, Ming-Hsiung Tsai, T.-C. Lin
Rok vydání:	2007
Předmět:	Materials science Silicon business.industry technology industry and agriculture chemistry.chemical_element Substrate (electronics) Micrometre chemistry Forensic engineering Optoelectronics Nanometre Wafer business Carbon
Zdroj:	2007 14th International Symposium on the Physical and Failure Analysis of Integrated Circuits.
DOI:	10.1109/ipfa.2007.4378101
Popis:	This investigation considers in detail a defect called "silicon substrate damaged defects" and also introduces these defects' forming mechanisms and their root causes. These defects are likely to become increasing important in the future of deep-sub micrometer ULSI's situation. Two conditions typically result in silicon damaged defects during manufacturing processes namely: (1) watermark with carbon content and (2) the electrical charges accumulated on the silicon wafer surface.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::4703c54c668522b0944ae1bde7315d55 https://doi.org/10.1109/ipfa.2007.4378101 Zobrazit plný text záznamu