A new analytical modelling of 10 nm negative capacitance-double gate TFET with improved cross talk and miller effects in digital circuit applications

Autor:	Adrija Mukherjee, Papiya Debnath, D. Nirmal, Manash Chanda
Rok vydání:	2023
Předmět:	General Engineering
Zdroj:	Microelectronics Journal. 133:105689
ISSN:	0026-2692
DOI:	10.1016/j.mejo.2023.105689
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::46f19d062b9f2dd168639bd391430e99 https://doi.org/10.1016/j.mejo.2023.105689 Zobrazit plný text záznamu Full Text from ScienceDirect