Optical absorption, disorder, and hydrogen in amorphous silicon

Autor:	Stefan Zukotynski, L. S. Sidhu, J. M. Perz, Stephen K. O’Leary
Rok vydání:	1996
Předmět:	Amorphous silicon Physics Absorption spectroscopy Hydrogen Band gap Gaussian General Physics and Astronomy chemistry.chemical_element Molecular physics Standard deviation symbols.namesake chemistry.chemical_compound chemistry Density of states symbols Absorption (electromagnetic radiation)
Zdroj:	Canadian Journal of Physics. 74:256-259
ISSN:	1208-6045 0008-4204
DOI:	10.1139/p96-870
Popis:	We study how bonded hydrogen influences the optical absorption spectrum of amorphous silicon. We use a model for optical absorption in which the local form of the joint density of states is averaged over a Gaussian distribution of energy-gap fluctuations, this distribution being characterized by a mean energy gap and a standard deviation about this mean. We then fit this model to optical absorption data, and study how the modeling parameters vary with the bonded hydrogen concentration. We find that for the group of samples that we have considered, for bonded-hydrogen concentrations less than 10 at.%, we can adequately fit the data with a constant mean energy gap and a variable standard deviation that decreases with increasing bonded-hydrogen concentration. This suggests that bonded hydrogen plays a significant role in decreasing the amount of disorder in amorphous silicon.
Databáze:	OpenAIRE
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