Material properties of InAlAs layers grown by MBE on vicinal (111)B InP substrates

Autor:	E Macarona, N Chrysanthakopoulos, Maria Kayambaki, A. Cornet, Francesca Peiró, Katerina Tsagaraki, Zacharias Hatzopoulos, K Michelakis, M. Calamiotou, N Bécourt, Anna Vilà, Alexandros Georgakilas
Rok vydání:	1999
Předmět:	Silicon business.industry Doping Mineralogy chemistry.chemical_element Heterojunction Condensed Matter Physics Inorganic Chemistry chemistry X-ray crystallography Materials Chemistry Optoelectronics Beryllium business Vicinal Quantum well Molecular beam epitaxy
Zdroj:	Journal of Crystal Growth. :248-251
ISSN:	0022-0248
DOI:	10.1016/s0022-0248(98)01331-1
Popis:	InAlAs layers and InGaAs/InAlAs quantum well heterostructures, grown by molecular beam epitaxy on vicinal (1 1 1)B InP substrates, exhibited extensive surface step bunching, compositional inhomogeneities and degraded crystalline quality, with variations depending on the exact misfit strain and growth conditions. Silicon and beryllium doping of (1 1 1) InAlAs behaved similarly to the (1 0 0) case but a different predominant deep level was detected in n-type (1 1 1) material.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::46eb6fe709f2c0b5942b1be01d2f495e https://doi.org/10.1016/s0022-0248(98)01331-1 Zobrazit plný text záznamu Full Text from ScienceDirect