Effect of film composition and structure on the crystallization point of atomic layer deposited HfAlOx using metal (diethylamino) precursors and ozone
| Autor: | Axel Soulet, Christos G. Takoudis, Rajesh Katamreddy, Gregory Jursich, Ronald S. Inman |
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| Rok vydání: | 2008 |
| Předmět: |
Materials science
Polymers and Plastics biology Annealing (metallurgy) Metals and Alloys Analytical chemistry chemistry.chemical_element Microstructure Hafnia biology.organism_classification Electronic Optical and Magnetic Materials law.invention Hafnium Crystallography Atomic layer deposition chemistry law X-ray crystallography Ceramics and Composites Thin film Crystallization |
| Zdroj: | Acta Materialia. 56:710-718 |
| ISSN: | 1359-6454 |
| DOI: | 10.1016/j.actamat.2007.10.017 |
| Popis: | Atomic layer deposition (ALD) of HfAlO x on Si(1 0 0) was carried out using tetrakis-diethylamino hafnium (TDEAH) and tris-diethylamino aluminum (TDEAA) as metal precursors and ozone as oxidizer. ALD temperature windows of TDEAA and TDEAH overlapped between 200 and 275 °C, which is critical for ALD of composite HfAlO x films. Rutherford backscattering analysis of HfAlO x shows a strong correlation between the number of ALD cycles of alumina and hafnia being alternated and the film composition. Grazing incidence X-ray diffraction analyses of thermally annealed films indicate that a higher Al concentration increases the crystallization temperature and degree of crystallization. In addition to composition, crystallization of HfAlO x film also depends on the film structure defined by the deposition cycle sequence. For example, films deposited by alternating TDEAH/O 3 and TDEAA/O 3 cycles in a 2:1 ratio were found to have a lower degree of crystallization than films deposited by alternating in a 4:2 ALD cycle ratio, even though the ratios of Hf and Al are the same. |
| Databáze: | OpenAIRE |
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