Peculiarities of neutron irradiation influence on GaP light-emitting structures

Autor:	V. Tartachnyk, M. B. Pinkovska, A.P. Litovchenko, O.V. Konoreva, M. Drahomanov, V. Opilat, P.G. Litovchenko
Rok vydání:	2009
Předmět:	Materials science Exciton Radiation Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials law.invention law Charge carrier Neutron Irradiation Electrical and Electronic Engineering Atomic physics Quantum well Quantum tunnelling Light-emitting diode
Zdroj:	Semiconductor physics, quantum electronics and optoelectronics. 12:276-279
ISSN:	1605-6582 1560-8034
DOI:	10.15407/spqeo12.03.276
Popis:	GaP LEDs irradiated by reactor neutrons were studied by optical and electrical methods. The observed emission intensity degradation is related with two factors: 1) radiation fields that destroy bond excitons and 2) decrease in the free charge carrier concentration, which is caused by their capture by radiation defects. Study of current- voltage characteristics at 77 K by highly precession methods has revealed the appearance of N-shaped negative differential region caused by carrier tunneling onto deep levels in quantum wells, which might exist in initial and irradiated p-n structures. In some cases, improvement of current-voltage characteristics after neutron irradiation is observed. An assumption is made about the radiation-stimulated origin of this effect.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::46c31837083a821c672b107adb9521e8 https://doi.org/10.15407/spqeo12.03.276 Zobrazit plný text záznamu Plný text ve formátu PDF