Effect of Annealing on the Dark and Illuminated I(V ) Characterization of a ZnO:Ga|Cu2O Hetero-Junction Prepared by Ultrasonic Spray System
| Autor: | L. Radjehi, N. Attaf, Walid Filali, H. Trir, N. Sengouga, T. Tibermacine, L. Arab, D. Abdelkader |
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| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Fabrication Materials science Band gap Annealing (metallurgy) Analytical chemistry Oxide chemistry.chemical_element 02 engineering and technology Zinc 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials chemistry.chemical_compound Chemical bond chemistry 0103 physical sciences Thin film Fourier transform infrared spectroscopy 0210 nano-technology |
| Zdroj: | Semiconductors. 54:534-542 |
| ISSN: | 1090-6479 1063-7826 |
| DOI: | 10.1134/s1063782620050164 |
| Popis: | This paper presents the Ultrasonic Spray Pyrolysis system fabrication of gallium-doped zinc oxide (ZnO:Ga)|cuprous oxide (Cu2O) thin film hetero-junction. The deposition parameters were constant for ZnO:Ga and Cu2O. Structural and optical properties of ZnO:Ga, Cu2O, and ZnO:Ga|Cu2O hetero-junction were characterized by X-Ray Diffraction method and UV–Vis spectrometry, respectively. SEM and FTIR were used to reveal the morphology and the nature of the chemical bonds. The electrical properties were measured by an Keithley I–V source meter. The ZnO:Ga|Cu2O hetero-junction was annealed at 350, 400, and 450°C and the current-voltage characteristics were measured. The band gaps of ZnO, Cu2O, and ZnO:Ga|Cu2O are ~3.27, ~2.65, and ~3.29 eV, respectively. The annealing temperature improves the hetero-junction quality. |
| Databáze: | OpenAIRE |
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