Electrochemical defect profiling for semiconductor heterostructures
| Autor: | János Makai, Ákos Nemcsics |
|---|---|
| Rok vydání: | 2002 |
| Předmět: |
In situ
Materials science business.industry Mineralogy Heterojunction Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Epitaxy Electrochemistry Crystallographic defect Condensed Matter::Materials Science Optoelectronics General Materials Science Electrochemical etching business Molecular beam epitaxy Semiconductor heterostructures |
| Zdroj: | Journal of Physics: Condensed Matter. 14:13299-13304 |
| ISSN: | 0953-8984 |
| DOI: | 10.1088/0953-8984/14/48/381 |
| Popis: | A special selective electrochemical etching-based apparatus is presented which is appropriate for use in the in situ observation of the defects in heterostructures. The working of the set-up is demonstrated on InGaAs/ GaAs(001) heteroepitaxial systems where the epitaxial layer thickness is above the critical layer thickness. With incremental layer removal, the depth profile of the dislocation density is mapped and the measured density of defects which is inversely proportional to the layer thickness is in agreement with the theoretical model. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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