Microplasma breakdown of InGaN/GaN heterostructures in high-power light-emitting diodes

Autor:	O. V. Lyashenko, M. P. Kisselyuk, A. I. Vlasenko, V. P. Veleschuk
Rok vydání:	2013
Předmět:	Materials science Silicon business.industry Microplasma chemistry.chemical_element Heterojunction Substrate (electronics) Semiconductor device Condensed Matter Physics law.invention Luminous flux chemistry law Optoelectronics business Luminescence Spectroscopy Light-emitting diode
Zdroj:	Journal of Applied Spectroscopy. 80:117-123
ISSN:	1573-8647 0021-9037
Popis:	Microplasma breakdown luminescence of InGaN/GaN heterostructures in different types of high-power light emitting diodes is studied. It is shown that the spectrum of the breakdown luminescence, the luminescence onset voltage, the current in the first microplasma, and the number of microplasmas for a fixed voltage all correlate with the density of critical extended defects, the luminous flux, and the uniformity of current flow, and are determined by the type of substrate (Si, SiC, Al2O3).
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::46a2b9c5ba218d2bc5ebb5b3b250537c https://doi.org/10.1007/s10812-013-9730-7 Zobrazit plný text záznamu Plný text ve formátu PDF