Etching of 6H‐SiC and 4H‐SiC using NF 3 in a Reactive Ion Etching System
| Autor: | E. D. Luckowski, R. W. Johnson, Jeffrey B. Casady, M. Bozack, David C. Sheridan, John R. Williams |
|---|---|
| Rok vydání: | 1996 |
| Předmět: |
Auger electron spectroscopy
Renewable Energy Sustainability and the Environment Chemistry Scanning electron microscope Analytical chemistry chemistry.chemical_element Mineralogy Condensed Matter Physics Epitaxy Surfaces Coatings and Films Electronic Optical and Magnetic Materials Volumetric flow rate Chamber pressure Etching (microfabrication) Aluminium Materials Chemistry Electrochemistry Reactive-ion etching |
| Zdroj: | Journal of The Electrochemical Society. 143:1750-1753 |
| ISSN: | 1945-7111 0013-4651 |
| Popis: | The use of pure NF 3 source gas in reactive ion etching of bulk and epitaxy Si-face, 6H-SiC, and 4H-SiC is reported. The effects of RF power and chamber pressure on etch rate and surface morphology are discussed. A process developed for a smooth, residue-free etch, with a relatively high etch rate of ∼1500 A/min is examined using scanning electron microscopy and Auger electron spectroscopy surface analysis. The process developed had a self-induced dc bias ranging from 25 to 50 V, a forward RF power of 275 W (1.7 W/cm 2 ), chamber pressure of 225 mT, and a NF 3 flow rate between 95 and 110 sccm. No chemical residue or aluminum micromasking was observed on any of the samples etched with the above process. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|