A 32Mb Embedded Flash Memory based on 28nm with the best Cell Efficiency and Robust Design achievement featuring 13.48Mb/mm2 at 0.85V

Autor:	Hyunjin Shin, Sangkyung Won, Dohui Kim, Byunghun Choi, Gyusung Kim, Myeonghee Oh, Jaeseung Choi, Jongwook Kye
Rok vydání:	2022
Zdroj:	2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits).
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::46a0edb0c3ca9f181d17bb736c8cb6ec https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830151 Zobrazit plný text záznamu