High-Performance Solution-Processed ZnSnO TFTs with Tunable Threshold Voltages

Autor:	Shiao-Po Tsai, Chao-Jui Hsu, Ching-Hsiang Chang, Ching-Chien Hu, Cheng-Hsu Chou, Chung-Chih Wu, Hsin-Hung Lin, Yu-Tang Tsai
Rok vydání:	2015
Předmět:	Materials science business.industry Annealing (metallurgy) Transistor Oxide Electronic Optical and Magnetic Materials law.invention chemistry.chemical_compound Semiconductor chemistry law Thin-film transistor Optoelectronics Inverter business Voltage Electronic circuit
Zdroj:	ECS Journal of Solid State Science and Technology. 4:P176-P180
ISSN:	2162-8777 2162-8769
DOI:	10.1149/2.0251505jss
Popis:	In this work, we had investigated the solution-processed zinc-tin oxide (ZTO) semiconductors using metal chloride precursors and the sol-gel method. We studied the effects of different processing conditions, such as different procedures of spin-coating and annealing, on thin-film transistor (TFT) characteristics (e.g., mobility, threshold voltages etc.). High-performance In-free solution-processed ZTO TFTs with mobilities up to 10–17 cm2/V⋅s and threshold voltages being tunable from positive to negative (i.e. from enhancement mode to depletion mode) had been achieved. The capability to control operation modes of TFTs provides the freedom to implement higher-performance TFT circuits (e.g. high-gain inverters demonstrated) using only solution-processed n-type ZTO TFTs. Using these two types of ZTO TFTs, depletion-load inverters were implemented, demonstrating enhanced characteristics in inverter characteristics compared to the enhancement-load inverters.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::469df0513424d4849a7c0b4508382571 https://doi.org/10.1149/2.0251505jss Zobrazit plný text záznamu