Rapid thermal oxidation of Ge-rich Si1−xGex heterolayers

Autor:	S. K. Samanta, Michael R. C. Hunt, Samarjit Chakraborty, Amit K. Chakraborty, W. J. Yoo, Rabindra N. Das, Milan Kumar Bera, Lidija Šiller, Goutam Kumar Dalapati, C. K. Maiti, Sanatan Chattopadhyay, Satyajit Saha, Yuriy Vladimirovich Butenko
Rok vydání:	2006
Předmět:	Thermal oxidation chemistry.chemical_compound Materials science Chemical engineering chemistry Rapid thermal processing Semiconductor materials Kinetics Oxide Surfaces and Interfaces Oxidation process Condensed Matter Physics Surfaces Coatings and Films
Zdroj:	Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 24:84-90
ISSN:	1520-8559 0734-2101
Popis:	Rapid thermal oxidation (RTO) of the Ge-rich (x=0.7)Si1−xGex heterolayer is reported. In particular, the structural modifications of SiGe films during oxidation process and the dependence of the oxidation kinetics on Ge content, oxidation temperature, and oxide thickness have been studied. The segregation mechanism of Ge at the oxide∕SiGe interface is discussed. Interface properties of the RTO-grown oxides studied using high-frequency capacitance-voltage (C-V) characteristics of metal-oxide-semiconductor capacitors are also reported.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::4695791eeb458b7c2c297bca5b45bedf https://doi.org/10.1116/1.2137329 Zobrazit plný text záznamu