Effects of annealing and current stressing on the intermetallic compounds growth kinetics of Cu/thin Sn/Cu bump
| Autor: | Myeong-Hyeok Jeong, Byung-Hyun Kwak, Jae-Won Kim, Young-Bae Park |
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| Rok vydání: | 2012 |
| Předmět: |
Phase transition
Reaction mechanism Materials science Growth kinetics Annealing (metallurgy) Metallurgy Intermetallic Electron Condensed Matter Physics Electromigration Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Wind force Electrical and Electronic Engineering Composite material |
| Zdroj: | Microelectronic Engineering. 89:50-54 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/j.mee.2011.04.025 |
| Popis: | Thermal annealing and electromigration (EM) tests were performed at 125-175^oC with 2.2x10^4A/cm^2 conditions in order to investigate the growth kinetics of intermetallic compound (IMC) in Cu/thin Sn/bump. Cu"3Sn was formed and grown at the Cu pillar/Cu"6Sn"5 interface with increasing annealing and current stressing times. IMC thickness increased linearly with the square root of annealing time while it increased linearly with the current stressing time, which means that current stressing accelerated the interfacial IMC reaction. Cu"3Sn phases continuously grew with stressing time while thickness of Cu"6Sn"5 phase decreased due to very thin Sn thickness wrt Cu thickness. Change in the IMC growth slopes is closely related to the phase transition from Cu"6Sn"5 to Cu"3Sn phases after complete consumption of the remaining Sn phase due to the limiting amount of Sn phase in Cu/thin Sn/Cu bump, which can be divided with stages 1 and 2. The complete consumption time of Sn phase in EM condition was faster than that in annealing condition. The activation energies for current stressing are lower than that for annealing, which might be closely related to the change in dominant reaction mechanism by electron wind force. |
| Databáze: | OpenAIRE |
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