Influence of imperfections in the crystal structure of gallium arsenide on the parameters of electron-beam excited lasers

Autor:	S I Chugunova, I V Kryukova, I V Gridneva, O N Grigor'ev, E M Krasavina
Rok vydání:	1975
Předmět:	Diffraction Materials science business.industry General Engineering Physics::Optics Laser Crystallographic defect Gallium arsenide law.invention chemistry.chemical_compound chemistry law Optoelectronics Crystal optics Terahertz time-domain spectroscopy business Tunable laser Quantum well
Zdroj:	Soviet Journal of Quantum Electronics. 5:577-579
ISSN:	0049-1748
DOI:	10.1070/qe1975v005n05abeh011200
Popis:	An investigation was made of the parameters of the radiation emitted by electron-beam-excited lasers made of gallium arsenide single crystals prepared by different methods. A correlation was established between the radiative characteristics of these lasers and the degree of structure imperfection of the crystals, determined by x-ray diffraction methods. The high efficiency and homogeneity of the laser emission from the samples prepared by the Stockbarger method was attributed to a high quality of the structure of crystals produced in this way.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::468a3ece435d06114a734c82aae65ba1 https://doi.org/10.1070/qe1975v005n05abeh011200 Zobrazit plný text záznamu