An Ultra-Dense One-Transistor Ternary-Content-Addressable Memory Array Based on Non-Volatile and Ambipolar Fin Field-Effect Transistors

Autor:	Zhaohao Zhang, Shujuan Mao, Gaobo Xu, Qingzhu Zhang, Zhenhua Wu, Huaxiang Yin, Tianchun Ye
Rok vydání:	2023
Předmět:	Electrical and Electronic Engineering Electronic Optical and Magnetic Materials
Zdroj:	IEEE Transactions on Electron Devices. 70:1029-1033
ISSN:	1557-9646 0018-9383
DOI:	10.1109/ted.2023.3239330
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::4689871909aee16e73b9d90e4620b0e4 https://doi.org/10.1109/ted.2023.3239330 Zobrazit plný text záznamu