Properties of Lead Telluride Mid-Infrared Imaging Devices of Focal Plane Arrays
| Autor: | Toru Kurabayashi, Arata Yasuda, Jun-ichi Nishizawa, Ken Suto |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Materials science business.industry Biomedical Engineering Mid infrared Bioengineering 02 engineering and technology General Chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Focal Plane Arrays Lead telluride chemistry.chemical_compound Optics chemistry 0103 physical sciences General Materials Science 0210 nano-technology business |
| Zdroj: | Journal of Nanoscience and Nanotechnology. 17:5130-5133 |
| ISSN: | 1533-4880 |
| DOI: | 10.1166/jnn.2017.13975 |
| Popis: | We fabricated p–n-junction-type and Schottky barrier (SB)-type lead telluride (PbTe) mid-infrared focal plane arrays (FPAs) using a flip-chip bonder. The detection wavelength peak of the SB-type FPA shifted from 6.10 μm to 4.95 μm as the ambient temperature was increased from −258.15°C to −148.15°C. At −196.5°C, the detection wavelength peak and cut-off wavelength were 5.68μm and 6.16μm, respectively. The p–n-junction-type FPA yielded the sharpest photoconductivity spectrum among the investigated devices, presumably because of the Tl-related deep levels in its p-type PbTe epitaxial layer. These deep levels absorb the mid-infrared light and cut off the detection wavelength range. Thus, the p–n-junction-type FPAs are expected to be employed in vision cameras and sensors with selectable mid-infrared wavelengths. Meanwhile, the SB-type FPA has a high dielectric constant; consequently, it develops a wide depletion layer that detects a wide range of mid-infrared wavelengths. FPAs based on the PbTe system are potentially implementable in simple, highly sensitive, mid-infrared imaging devices with a wide scan range. |
| Databáze: | OpenAIRE |
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