Analytical model for charge transport in organic thin-film transistors: application to polythiophene
| Autor: | S. Zorai, R. Bourguiga |
|---|---|
| Rok vydání: | 2012 |
| Předmět: |
Condensed matter physics
Transistor Nanotechnology Condensed Matter Physics Elementary charge Variable-range hopping Electronic Optical and Magnetic Materials law.invention Conductor Active layer chemistry.chemical_compound chemistry Thin-film transistor law Polythiophene Instrumentation Saturation (magnetic) |
| Zdroj: | The European Physical Journal Applied Physics. 59:20201 |
| ISSN: | 1286-0050 1286-0042 |
| DOI: | 10.1051/epjap/2012110429 |
| Popis: | The electronic charge transport in active layer of organic thin-film transistor (OTFT) based on conductor polythiophene (sexithiophene (6T) and octithiophene (8T)) was studied. A mathematical model is presented based on the variable range hopping (VRH) transport theory. Using the VRH model the expression of source-drain current is established for two regimes: linear regime for drain bias V D = − 2 V and saturation regime for V D = − 30 V at low temperature and at room temperature. All electrical key parameters of OTFTs based on polythiophene have been extracted. A good agreement between theoretical model and experimental measurement of electrical characteristics is obtained for both temperature ranges: low temperature and room temperature. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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