On a diffusion mechanism of intrinsic stress relaxation in AuGeGaAs contacts

Autor:	R. V. Konakova, Yu. A. Tkhorik, L. S. Khazan, V. I. Vdovin, V.V. Milenin, A.A. Naumovets
Rok vydání:	1994
Předmět:	Condensed matter physics Chemistry Plane (geometry) Metals and Alloys Surfaces and Interfaces Surfaces Coatings and Films Electronic Optical and Magnetic Materials Condensed Matter::Materials Science Crystallography Materials Chemistry Stress relaxation Diffusion (business) Dislocation Mechanism (sociology)
Zdroj:	Thin Solid Films. 238:51-53
ISSN:	0040-6090
DOI:	10.1016/0040-6090(94)90647-5
Popis:	A striped ordered structure in the interface plane was observed by means of TEM in the AuGeGaAs heterosystem. This effect seems to result from a diffusion mechanism of elastic stress relaxation, and not from the ordinary dislocation mechanism.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::4668faa489baaa9b832a968b9a07c9e9 https://doi.org/10.1016/0040-6090(94)90647-5 Zobrazit plný text záznamu