Thin carbon films: Correlation between morphology and field-emission capability
| Autor: | P. G. Gabdullin, Vasiliy Osipov, Alexey Zhurkin, Nadezhda A. Besedina, O. E. Kvashenkina, Alexander V. Arkhipov |
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| Rok vydání: | 2020 |
| Předmět: |
Materials science
Photoluminescence chemistry.chemical_element 02 engineering and technology Substrate (electronics) 010402 general chemistry 01 natural sciences Condensed Matter::Materials Science symbols.namesake Electric field Materials Chemistry Electrical and Electronic Engineering Spectroscopy Mechanical Engineering General Chemistry 021001 nanoscience & nanotechnology 0104 chemical sciences Electronic Optical and Magnetic Materials Field electron emission Carbon film chemistry Chemical physics symbols 0210 nano-technology Raman spectroscopy Carbon |
| Zdroj: | Diamond and Related Materials. 105:107805 |
| ISSN: | 0925-9635 |
| Popis: | The paper presents a new study of correlation between morphology of thin carbon films deposited on Si substrates, their electronic properties and capability of cold electron emission in electric field with macroscopic magnitude of the order of 1 V/μm. Comparative experiments have demonstrated that substrate parameters have little, if any, direct effect on emission properties of the films: the observed variations of the emission threshold field value in the range from several percent up to two times depending on the substrate species was attributed to substrate-orientation-sensitive mechanism of the film growth leading to notable difference in topography of the compared films (indirect effect). Tunneling spectroscopy study showed that the films with the best emission properties comprise sp2 carbon islands (or carbon dots, CDs) having electron systems separated from each other and from the substrate. This conclusion has been supported by the presence of a photoluminescence component in Raman spectra of the emissive films, which is often associated with electron confinement effects in CDs. In combination, the new experimental data witness in favor of hot-electron mechanism of low-threshold electron emission from the studied films. |
| Databáze: | OpenAIRE |
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