Hydrogenated microcrystalline silicon films prepared by VHF-PECVD and single junction solar cell
| Autor: | Xinhua Geng, Jianping Xi, Qingsong Lei, Zhao Ying, Zhimeng Wu |
|---|---|
| Rok vydání: | 2006 |
| Předmět: |
inorganic chemicals
Materials science Silicon Mechanical Engineering technology industry and agriculture Analytical chemistry Nanocrystalline silicon chemistry.chemical_element Silane Amorphous solid law.invention chemistry.chemical_compound symbols.namesake Microcrystalline chemistry Mechanics of Materials Plasma-enhanced chemical vapor deposition law Solar cell symbols General Materials Science Raman spectroscopy |
| Zdroj: | Journal of Materials Science. 41:1721-1724 |
| ISSN: | 1573-4803 0022-2461 |
| DOI: | 10.1007/s10853-006-2923-1 |
| Popis: | Intrinsic microcrystalline silicon films have been prepared with very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) from silane/hydrogen mixture at 180°C. The effect of silane concentration and discharge power on the growth of silicon films was investigated. Samples were investigated by Fourier transform infrared spectroscopy, Raman scattering and X-ray diffraction. The Raman spectrum shows that the morphological transition from microcrystalline to amorphous occurs under conditions of high silane concentration and low discharge power. X-ray diffraction spectra indicate a preferential growth direction of all microcrystalline silicon films in the (111) plane. In addition, a solar cell with an efficiency of 5.1% has been obtained with the intrinsic microcrystalline layer prepared at 10W. |
| Databáze: | OpenAIRE |
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