Electrical characterization of Si-doped conductive AlInN films grown nearly lattice-matched to c-plane GaN on sapphire by metalorganic chemical vapor deposition
| Autor: | Tetsuya Takeuchi, Takashi Egawa, Taiki Nakabayashi, Mizuki Yamanaka, Makoto Miyoshi |
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| Rok vydání: | 2020 |
| Předmět: |
Chemical substance
Materials science 02 engineering and technology Chemical vapor deposition 01 natural sciences law.invention Magazine law Electrical resistivity and conductivity Lattice (order) 0103 physical sciences Materials Chemistry Electrical and Electronic Engineering Instrumentation Electrical conductor 010302 applied physics business.industry Process Chemistry and Technology 021001 nanoscience & nanotechnology Surfaces Coatings and Films Electronic Optical and Magnetic Materials Sapphire Optoelectronics 0210 nano-technology Science technology and society business |
| Zdroj: | Journal of Vacuum Science & Technology B. 38:052205 |
| ISSN: | 2166-2754 2166-2746 |
| DOI: | 10.1116/6.0000284 |
| Popis: | In this study, Si-doped conductive AlInN films with a thickness of 300 nm were grown nearly lattice-matched to c-plane GaN-on-sapphire templates by metalorganic chemical vapor deposition. A high net donor concentration of approximately 1 × 1019 cm−3 was observed for a highly Si-doped AlInN film. To evaluate its vertical-direction electrical resistivity without being affected by polarization-induced carriers, the transfer length measurement (TLM) model was applied to two kinds of test element groups. By analyzing the TLM results, the vertical-direction resistivity of the 300-nm-thick n-type AlInN film was estimated to be 5.8 × 10−4 Ω cm2. |
| Databáze: | OpenAIRE |
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