Preparation and Surface Characterization of Nanostructured MoO3/CoxOy and V2O5/CoxOy Interfacial Layers as Transparent Oxide Structures for Photoabsorption
Autor: | Kabir O. Oyedotun, B. A. Taleatu, R. A. Busari, Ezekiel Omotoso, O. E. Adewumi, S.A. Adewinbi, Ncholu I. Manyala |
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Rok vydání: | 2020 |
Předmět: |
010302 applied physics
Materials science business.industry Oxide 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Space charge Vanadium oxide Electronic Optical and Magnetic Materials Overlayer Crystal chemistry.chemical_compound chemistry 0103 physical sciences Materials Chemistry Optoelectronics Charge carrier Electrical and Electronic Engineering Thin film 0210 nano-technology business Cobalt oxide |
Zdroj: | Journal of Electronic Materials. 49:3837-3848 |
ISSN: | 1543-186X 0361-5235 |
Popis: | A simple low-cost electrochemical deposition technique has been used to grow molybdenum oxide (MoO3) and vanadium oxide (V2O5) nanostructures separately on cobalt oxide (CoxOy) thin film to form two different bilayer films. The samples were characterized by some surface probing techniques. Morphological and crystal structural studies revealed that the deposited α-MoO3 and V2O5 layers completely laminated the underlying cubic CoxOy film to form compact structures without any significant lattice distortion. The average particle sizes were estimated to be between 34 nm and 41 nm. Optical studies revealed the presence of two energy band transitions in the spinel CoxOy structure which can be attributed to the occurrence of ligand-to-metal charge transfer (LMCT). The electrical studies showed a trap-filled limit voltage (VTFL) in the CoxOy layer which was explained on the basis of space charge limited current (SCLC) behavior of porous film, and it was corrected with lamination by the overlayer. This study also reaffirmed the role of transition metal oxides as a recipe for window and buffer layers capable of minimizing photon absorption loss and recombination of charge carriers between absorber and the contact electrodes in optoelectronic devices. |
Databáze: | OpenAIRE |
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