Optical Characterization of Native Defects in 4H–SiC Irradiated by 10 MeV Electrons with Subsequent Annealing
| Autor: | Yuezhong Zhang, Yuming Tian, Wang Yimou, Junlin Li, H. Wang, Yuesheng Chai, Kaiyue Wang |
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| Rok vydání: | 2021 |
| Předmět: |
Photoluminescence
Materials science Annealing (metallurgy) 010401 analytical chemistry Analytical chemistry 02 engineering and technology Electron Radiation 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Emission intensity 0104 chemical sciences Crystal Electron beam processing Irradiation 0210 nano-technology Spectroscopy |
| Zdroj: | Journal of Applied Spectroscopy. 87:1023-1028 |
| ISSN: | 1573-8647 0021-9037 |
| DOI: | 10.1007/s10812-021-01104-8 |
| Popis: | Low-temperature photoluminescence was employed to investigate the defects of 4H–SiC crystals after high-energy electron irradiation, and the annealing characteristics and dependence of the detecting temperature and irradiation doses were investigated. Results showed that the emission, associated with carbon antisite–vacancy (VCCSi)+ defects was dominant in the electron-irradiated 4H–SiC crystal. With increase in detecting temperature, the emission decreased demonstrating red-shifted, and the full width at half-maximum broadened, which was attributed to the increase in the concentration of carriers arising from thermal activation at high temperature. The emission intensity was the highest value at an irradiation dose of 7.9 × 1018 e/cm2, and then began to decrease. This revealed the lattice damage caused by long-term high-energy irradiation, which reduced the intensity of the defect radiation in the spectrum. |
| Databáze: | OpenAIRE |
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