Properties of CuInS2 thin films grown by a two-step process without H2S
| Autor: | Ulf Blieske, V. Dieterle, Sebastian Fiechter, Dimitrios Hariskos, D. Braunger, Arnulf Jäger-Waldau, I. Hengel, H.W. Schock, Klaus Ellmer, Joachim Klaer, M. Ruckh, R. Klenk, T. Kampschulte, M.Ch. Lux-Steiner, Ch. Kaufmann |
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| Rok vydání: | 1997 |
| Předmět: |
Materials science
Renewable Energy Sustainability and the Environment Scanning electron microscope Analytical chemistry chemistry.chemical_element Heterojunction Copper Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry Etching (microfabrication) Deposition (phase transition) Thin film Layer (electronics) Stoichiometry |
| Zdroj: | Solar Energy Materials and Solar Cells. 49:349-356 |
| ISSN: | 0927-0248 |
| DOI: | 10.1016/s0927-0248(97)00083-4 |
| Popis: | CuInS2 thin films were prepared by sulfurization of sequentially deposited CuIn stacks with elemental sulfur. Precursors as well as reacted films are characterized by scanning electron microscopy (SEM), energy dispersive X-ray analysis (EDX) and X-ray diffraction (XRD). Excess copper is required for optimum properties and leads to a CuS secondary phase segregated at the surface. Stoichiometry is regained by etching after which heterojunctions are formed by deposition of a CdSZnO window layer. An active area efficiency of 10.4% has been achieved. |
| Databáze: | OpenAIRE |
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