Low-ohmic contacts by excimer laser annealing of implanted polysilicon

Autor:	Q.W. Pen, C.C.G. Visser, van den Aj Berg, J. Slabbekoorn, L.K. Nanvpr
Rok vydání:	2002
Předmět:	Materials science Silicon Dopant business.industry Polysilicon depletion effect Doping Oxide chemistry.chemical_element chemistry.chemical_compound Ion implantation chemistry Electronic engineering Optoelectronics sense organs business Ohmic contact Layer (electronics)
Zdroj:	1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105).
DOI:	10.1109/icsict.1998.785811
Popis:	High power excimer laser annealing is used to activate dopants implanted in polysilicon layers. Sheet resistances as low os 50 /spl Omega///spl square/ are achieved for thin polysilicon layers on oxide, and low ohmic contacts have been produced to implanted junctions elevated by a polysilicon layer. The influence of the thickness of either the poly or the underlying oxide is evaluated.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::463220445010e9fe34cf19deec572d36 https://doi.org/10.1109/icsict.1998.785811 Zobrazit plný text záznamu