A recent review of mid-wavelength infrared type-II superlattices: carrier localization, device performance, and radiation tolerance
| Autor: | Joshua M. Duran, Elizabeth H. Steenbergen, Geoffrey D. Jenkins, Christian P. Morath, Vincent M. Cowan, Gamini Ariyawansa, Charles J. Reyner, John E. Scheihing |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Materials science Infrared business.industry 02 engineering and technology Carrier lifetime 021001 nanoscience & nanotechnology 01 natural sciences chemistry.chemical_compound Gallium antimonide chemistry 0103 physical sciences Optoelectronics Quantum efficiency Mercury cadmium telluride Indium arsenide 0210 nano-technology business Indium gallium arsenide Dark current |
| Zdroj: | SPIE Proceedings. |
| ISSN: | 0277-786X |
| DOI: | 10.1117/12.2266040 |
| Popis: | The last two decades have seen tremendous progress in the design and performance of mid-wavelength infrared (MWIR) type-II superlattices (T2SL) for detectors. The materials of focus have evolved from the InAs/(In)GaSb T2SL to include InAs/InAsSb T2SLs and most recently InGaAs/InAsSb SLs, with each materials system offering particular advantages and challenges. InAs/InAsSb SLs have the longest minority carrier lifetimes, and their best nBn dark current densities are 120 K) where these SL unipolar barrier detectors are diffusion-limited and Auger-limited. The SL barrier detectors remain diffusion-limited post proton irradiation, but the dark current density increases due to the minority carrier lifetime decreasing with increased displacement damage causing an increase in the trap density. For these SL detectors to operate in space, the continued understanding and mitigation of point defects is necessary. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|