High-Frequency Electromagnetic Simulation and Optimization for GaN-HEMT Power Amplifier IC
Autor: | Cher Ming Tan, Dipesh Kapoor, Hsien-Chin Chiu, Vivek Sangwan, Chia Han Lin |
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Rok vydání: | 2019 |
Předmět: |
Computer science
Amplifier Transistor Semiconductor device modeling Electromagnetic compatibility 020206 networking & telecommunications Hardware_PERFORMANCEANDRELIABILITY 02 engineering and technology Integrated circuit design Integrated circuit Condensed Matter Physics Chip Integrated circuit layout Atomic and Molecular Physics and Optics law.invention law Hardware_INTEGRATEDCIRCUITS 0202 electrical engineering electronic engineering information engineering Electronic engineering Electrical and Electronic Engineering |
Zdroj: | IEEE Transactions on Electromagnetic Compatibility. 61:564-571 |
ISSN: | 1558-187X 0018-9375 |
DOI: | 10.1109/temc.2018.2820202 |
Popis: | Rapid increase in operating frequencies and power density necessitate the importance of examining electromagnetic compatibility/electromagnetic emissions (EMEs) from high-frequency and high-power integrated circuits (ICs). In this paper, a simulation method is demonstrated to study the EME using gallium nitride high electron mobility transistor power amplifier IC chip as a device under test. Simulation model is developed by collaborating a high-frequency structure simulator with a Keysight Advance Design System for simulation of three-dimensional layout of IC. The simulated EME results are verified with experimental measurement results; the hotspots obtained with higher EME as identified by a near-field scanner and simulation results are identical. With this simulation method, optimization is done using a response surface methodology to reduce the EME for the IC chip. It is found that small changes in the IC layout can make a significant difference in the EME. Simulation model developed with RSM optimization technique opens a gateway for the IC industry to investigate EME of their chip design without going through a costly and time-consuming process of fabrication for testing its EME. |
Databáze: | OpenAIRE |
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