Germanium on Silicon Avalanche Photodiode
| Autor: | Su Li, Dong Pan, Guanghui Hou, Wang Chen, Ching-yin Hong, Pengfei Cai, Tzung-I Su, Mengyuan Huang |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
Materials science
Optical fiber Multi-mode optical fiber Silicon photonics Silicon APDS business.industry chemistry.chemical_element Germanium 02 engineering and technology Avalanche photodiode Atomic and Molecular Physics and Optics law.invention 020210 optoelectronics & photonics Silicon photomultiplier chemistry law 0202 electrical engineering electronic engineering information engineering Optoelectronics Electrical and Electronic Engineering business |
| Zdroj: | IEEE Journal of Selected Topics in Quantum Electronics. 24:1-11 |
| ISSN: | 1558-4542 1077-260X |
| DOI: | 10.1109/jstqe.2017.2749958 |
| Popis: | Silicon photonics is considered as one of the promising technologies for high-speed optical fiber communications. Among various silicon photonic devices, germanium on silicon avalanche photodiodes (Ge/Si APDs) have attracted tremendous attention due to their the properties of high performance and low cost. The sensitivity of 10Gb/s APD reached −29.5dBm at 1550 nm with the bit error rate of 1 × 10−12 in 2015, and 25 Gb/s APD reached a highest sensitivity ever reported at about −23.5dBm at 1310 nm in 2016. Furthermore, a linear 28Gbaud APD receiver is found to have about 5dB more sensitivity than PIN solution for both multimode fiber (MMF) and single-mode fiber (SMF). Even with large defect density from lattice mismatch between Ge and Si substrate layer, Ge/Si APD devices demonstrate good reliability and pass all required qualification tests according to GR-468. In this paper, the structure, materials, process, performances, and reliability of APDs will be reviewed. |
| Databáze: | OpenAIRE |
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