| Autor: |
Ronald E. Enstrom, P. K. York, Ramon U. Martinelli, D. Capewell, R.J. Menna |
| Rok vydání: |
1992 |
| Předmět: |
|
| Zdroj: |
Laser Diode Technology and Applications IV. |
| ISSN: |
0277-786X |
| DOI: |
10.1117/12.59134 |
| Popis: |
We have observed laser action in InO7GaO3AsO72SbO28 IInPO.7SbO.3 double heterojunction, diode lasers at ? = 3.06 .tm. The maximum operating temperature was 35 K. The threshold current densities were in the range of 200 - 330 A /cm These devices were grown by organometallic vapor-phase epitaxy. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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